Development of dielectric material for high power technologies

My name is Antoine Bard; I am a postdoctoral researcher at the LTM. My current research projects focus on the development of dielectric materials for high-power GaN-based technologies.
At present, several challenges arise in this field: the use of 3D-geometry devices, such as trenches, increases leakage currents, and the passage of high currents requires precise control of electrical properties as well as high-quality materials.
As part of my projects, I am developing new methods for the quasi-conformal deposition of SiO2 using the inductively coupled plasma chemical vapor deposition (ICP-CVD) technique in order to reduce leakage currents. I am developing new deposition recipes for Al2O3 on state-of-the-art devices using atomic layer deposition (ALD) to improve material quality and control the electrical behavior of high-power devices.
These studies open up promising avenues for improving the performance of GaN-based power devices.