Menu principal
- Lab Overview
- News
-
Research
- MINASEE
-
PROSPECT
- Heterogeneous Integration On Si
-
Materials and Devices For Memory And Energy
- Materials and devices for piezoelectric applications and environmental sensors
- CMOS nanowires transistors And 3D integration
- Capacitive MIM
- Fin-FET etching
- III-V based Logical Devices
- IV-IV nano-Wires based TunFET
- Nano-Wire based Bio-Sensor
- PCRAM And RRAM Memories
- Development of the basic technological building blocks for fabrication of “Normally Off” MOS-HEMTs and quasi-vertical GaN MOSFETs on Si substrate.
- Advanced Plasma Processes
- Publications
- PlatForms And Resources
- Partnership And Innovation
- Job Offers
Pied de page
- Contact
- Sitemap
- Credits
- Legal notices
- Personal details
- Gestion des cookies
- Website accessibility: not compliant
- Se connecter